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PRODUCTION OF THE NEUTRON-DOPED SINGLE-CRYSTAL
SILICON BY FLOAT ZONE MELTING

Under the auspices of RISI, a one-of-the-kind Russian production of the high-purity single-crystal silicon by float-zone melting (FZM) has been established, succeeded by neutron transmutation doping.

Resulted from the FZM growth of the single-crystal silicon in ingots and the subsequent nuclear (neutron-transmutation) doping, dopants are not introduced into silicon, but produced from the atoms of silicon itself under the neutron radiation influence. This allows obtaining single-crystal silicon with the preset electrophysical values corresponding to modern requirements of power electronics and power industry for homogeneity of the structure, stability, and reproducibility of qualities.

High-purity single-crystal silicon is used extensively in production of semiconductor devices and IC chips.
 

The Structure of the Silicon Production Manufacture Shop Floor

  The Head of the Shop Floor
Andrey V. Ulimov
+7 (495) 276-53-01, extens. 42-55, 43-55
AVUlimov@niipribor.ru
 
Deputy Head of the Shop Floor
Natalia A. Ryabova
+7 (495) 276-53-01, extens. 40-45
NARyabova@niipribor.ru

Services

 
  • Manufacture of the single-crystal silicon in accordance with the technical specification requirements and taking the ordering customer’s requirements.
  • Manufacture and sale of silicon of various makes, including high-resistance (ZKOF, KOF, KBO-1, KBO-2, KBO-4, KBO-6, BDM, KB-10, KB-12):
    • crystal-lattice orientation <111>, <100>;
    • concentration of the optically active oxygen up to 2,5∙1016 cm-3 
  • Manufacturing rate of the silicon producing shop floor makes 2,5 – 4,5 tons a year depending on the diameter of growing single-crystals.
  • Production assets of the shop floor are TFZ-1435, FZ-1502, FZ-30 rigs.
  •  

Geometry and Product Characteristics

  • ingot diameter – from 40 to 125 mm
  • ingot length – from 300 to 1000 mm
  • resistivity value range – 40 – 800 ohms∙cm
  • relative deviation of resistivity measurement average from rated values (according to TU48-4-443-83) – up to 12 %
  • resistivity dispersion on the faces of ingots due to irradiation from rated value – ±6 %
  • lifetime of minority carriers – up to 15-250 ms
     
 
 
 
  • 140080, Lytkarino
  • 8 Turaevo Industrial Area.
  • +7 (495) 663-90-95
  • +7 (495) 663-90-74
  • risi@niipribor.ru